Document Type
Article
Abstract
In this research, the ideal procedures were obtained for growth epitaxial layers of tin and gallium solutions which are solid solutions, and the two solutions of the molten material were dissolved on a silicon substrate. The results were to obtain the lowest dislocation density of thin films. The relationship between the dislocation densities of thin films and the thickness of the thin film was an exponential relationship between its variable values. Thin films with a compound containing a smooth structure varied in order were obtained by smoothly changing the lattice parameters of the gradient gap solid solution, and an ideal structure of epitaxial layers of gallium on silicon substrate was also obtained.
Keywords
Thin films, substrate, lattice, melt, solution, solid solution, dislocation.
Recommended Citation
abdullah, maher nadher
(2023)
"Preparation and study of tin and gallium thin films on silicon substrates,"
Al-Qadisiyah Journal of Pure Science: Vol. 28
:
No.
1
, Article 11.
Available at:
https://doi.org/10.29350/2411-3514.1010
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